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Si3438DV
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
40
0.0355 at V GS = 10 V
0.0425 at V GS = 4.5 V
7.4
6.7
5.3 nC
? TrenchFET ? Power MOSFET
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? DC/DC Converter
TSOP-6
Top View
D
1
6
D
D
(1, 2, 5, 6)
3 mm D
2
5
D
Marking Code
G
3
4
S
A W
XXX
Lot Tracea b ility
and Date Code
Part # Code
G
(3)
2. 8 5 mm
(4)
Orderin g Information: Si343 8 D V -T1-E3 (Lead (P b )-free)
Si343 8 D V -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
40
± 20
7.4
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
5.8
5.5 b, c
4.4 b, c
20
2.9
1.6 b,c
3.5
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2.2
2 b,c
W
T A = 70 °C
1.25 b,c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
b, d
t ≤ 5s
Steady State
R thJA
R thJF
50
28
62.5
35
°C/W
Notes:
a. Based on 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 68393
S09-0766-Rev. B, 04-May-09
www.vishay.com
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